BUK9614-55T/R datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BUK9614-55T/R
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9614-55T/R Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 68 A DS Breakdown Voltage-Min: 55 V Avalanche Energy Rating (Eas): 200 mJ Drain-source On Resistance-Max: 0.0140 ohm Pulsed Drain Current-Max (IDM): 240 A
• Количество страниц
  8 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  57,16 KB

BUK9614-55T/R datasheet скачать

BUK9614-55T/R datasheet